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Title: Low-temperature carrier dynamics in high-mobility organic transistors of alkylated dinaphtho-thienothiophene as investigated by electron spin resonance

Charge carriers in high-mobility organic thin-film transistors of alkylated dinaphtho-thienothiophene (C{sub 10}-DNTT) have been directly observed by field-induced electron spin resonance (FI-ESR) down to 4 K. FI-ESR spectra of π-electron hole carriers of C{sub 10}-DNTT exhibited clear anisotropy, indicating a highly organized end-on molecular orientation at the device interface. The intra-grain and inter-grain carrier motion were probed by the motional narrowing effect of the ESR spectra. The intra-grain motion was clearly observed even at 4 K, showing intrinsically high mobility of C{sub 10}-DNTT crystallites. On the other hand, significantly low activation energy of ∼10 meV for inter-grain carrier hopping, compared with pristine DNTT, was observed, which shows that the alkyl substitution drastically enhances the carrier mobility of DNTT system.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603 (Japan)
  2. Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
  3. Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198 (Japan)
Publication Date:
OSTI Identifier:
22311162
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANISOTROPY; CARRIER MOBILITY; CARRIERS; CHARGE CARRIERS; ELECTRON SPIN RESONANCE; EQUIPMENT; INTERFACES; ORGANIC SEMICONDUCTORS; SPECTRA; THIN FILMS; TRANSISTORS