Low-temperature carrier dynamics in high-mobility organic transistors of alkylated dinaphtho-thienothiophene as investigated by electron spin resonance
- Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603 (Japan)
- Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
- Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198 (Japan)
Charge carriers in high-mobility organic thin-film transistors of alkylated dinaphtho-thienothiophene (C{sub 10}-DNTT) have been directly observed by field-induced electron spin resonance (FI-ESR) down to 4 K. FI-ESR spectra of π-electron hole carriers of C{sub 10}-DNTT exhibited clear anisotropy, indicating a highly organized end-on molecular orientation at the device interface. The intra-grain and inter-grain carrier motion were probed by the motional narrowing effect of the ESR spectra. The intra-grain motion was clearly observed even at 4 K, showing intrinsically high mobility of C{sub 10}-DNTT crystallites. On the other hand, significantly low activation energy of ∼10 meV for inter-grain carrier hopping, compared with pristine DNTT, was observed, which shows that the alkyl substitution drastically enhances the carrier mobility of DNTT system.
- OSTI ID:
- 22311162
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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