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Title: Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.
Authors:
; ; ;  [1] ; ;  [2]
  1. Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes Cedex 7 (France)
  2. COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22311159
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONY; ATOMS; BORON; DEPOSITION; EPITAXY; FILMS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; NANOSTRUCTURES; QUANTUM DOTS; QUANTUM WELLS; SUBSTRATES; SURFACE ENERGY; SURFACES; SURFACTANTS; TWO-DIMENSIONAL CALCULATIONS