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Title: Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22311143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BUFFERS; DEPOSITION; DISLOCATIONS; DRILLING; DROPLETS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; QUANTUM DOTS