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Title: P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.
Authors:
; ;  [1] ;  [2]
  1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
  2. Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Publication Date:
OSTI Identifier:
22311141
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DISTRIBUTION; ELECTRODES; ELECTROLUMINESCENCE; ELECTRON MOBILITY; EQUIPMENT; FERMI LEVEL; GALLIUM NITRIDES; GOLD; IONIZATION; LIGHT EMITTING DIODES; METALS; NICKEL; PLATINUM; SCHOTTKY BARRIER DIODES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS; ULTRAVIOLET RADIATION; VISIBLE RADIATION