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Title: Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.
Authors:
; ; ; ;  [1] ; ; ; ; ;  [2]
  1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany)
  2. Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22311139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CATHODOLUMINESCENCE; GALLIUM NITRIDES; HELIUM; INDIUM COMPOUNDS; LAYERS; PLASTICS; QUANTUM WELLS; RED SHIFT; RELAXATION; SPECTROSCOPY; STRAINS; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY