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Title: Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

We develop a technique for accurately measuring thickness of planar InAs films grown on (001) GaAs by spectroscopic ellipsometry, using bulk optical constants. We observe that the critical point structure for the E{sub 1} and E{sub 1} + Δ{sub 1} transitions extracted from the measured dielectric properties varies with strain in the layer. Transmission electron microscopy confirms the extracted thickness and measures the residual strain based on the dislocation spacing in the film. At small thickness, the E{sub 1} critical point is seen to markedly deviate from the dependence predicted by deformation potential theory and appears to be consistent with additional quantum confinement effects.
Authors:
; ; ; ; ; ;  [1]
  1. Nano Electronic Materials Branch (RXAN), Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433-7707 (United States)
Publication Date:
OSTI Identifier:
22311134
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFORMATION; DIELECTRIC PROPERTIES; DISLOCATIONS; ELLIPSOMETRY; EVALUATION; FILMS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; STRAINS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY