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Title: Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na{sub 3}Bi

We report a molecular beam epitaxial growth of Na{sub 3}Bi single-crystal thin films on two different substrates—epitaxial bilayer graphene terminated 6H-SiC(0001) and Si(111). Using reflection high-energy electron diffraction, we found that the lattice orientation of the grown Na{sub 3}Bi thin film was rotated by 30° respect to the surface lattice orientations of these two substrates. An in-situ angle-resolved photoemission spectroscopy clearly revealed the 3-dimensional Dirac-cone band structure in such thin films. Our approach of growing Na{sub 3}Bi thin film provides a potential route for further studying its intriguing electronic properties and for fabricating it into practical devices in future.
Authors:
 [1] ;  [2] ; ;  [3] ;  [2] ;  [1] ;  [2] ;  [4] ; ; ;  [1] ;  [5]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. (United States)
  3. Stanford Institute of Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)
  4. (United Kingdom)
  5. Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)
Publication Date:
OSTI Identifier:
22311128
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH ALLOYS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; GRAPHENE; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; ORIENTATION; PHOTOEMISSION; REFLECTION; SEMIMETALS; SILICON CARBIDES; SODIUM ALLOYS; SPECTROSCOPY; SUBSTRATES; SURFACES; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS; TOPOLOGY