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Title: Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm{sup −1} per QD layer, and the waveguide loss was ∼15 cm{sup −1} at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0} = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120 K in pulsed mode, which is the highest reported to date.
Authors:
; ; ; ;  [1]
  1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
Publication Date:
OSTI Identifier:
22311123
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; EMISSION; GAIN; GROUND STATES; HOLES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERMEDIATE INFRARED RADIATION; LASERS; LAYERS; LIGHT EMITTING DIODES; LIQUID PHASE EPITAXY; LOSSES; PHOSPHORUS COMPOUNDS; QUANTUM DOTS; RED SHIFT; SEMICONDUCTOR LASERS; TEMPERATURE RANGE 0065-0273 K; WAVEGUIDES; WAVELENGTHS