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Title: Dispersion engineering of high-Q silicon microresonators via thermal oxidation

We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength, while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)
  2. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)
  3. Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22311121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISPERSIONS; EMISSION; MICROSTRUCTURE; NONLINEAR PROBLEMS; OXIDATION; RESONATORS; SILICON; SURFACES; THICKNESS; WAVELENGTHS