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Title: Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.
Authors:
; ; ;  [1] ;  [2]
  1. IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of)
  2. Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311119
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENTS; EFFICIENCY; ELECTRICAL PROPERTIES; EMISSION; INDIUM OXIDES; LIGHT EMITTING DIODES; MULTIPLE SCATTERING; NANOMATERIALS; NANOWIRES; PHOTONS; PROBABILITY; QUANTUM WIRES; SILICON; SURFACES; TIN ADDITIONS; VISIBLE RADIATION; WAVEGUIDES