A polarization-independent broadband terahertz absorber

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890617· OSTI ID:22311116

Shi, Cheng; Zang, XiaoFei; Wang, YiQiao; Chen, Lin; Cai, Bin; Zhu, YiMing ^[1]

---

1. Shanghai Key Laboratory of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093 (China)

A highly efficient broadband terahertz absorber is designed, fabricated, and experimentally as well as theoretically evaluated. The absorber comprises a heavily doped silicon substrate and a well-designed two-dimensional grating. Due to the destructive interference of waves and diffraction, the absorber can achieve over 95% absorption in a broad frequency range from 1 to 2 THz and for angles of incidence from 0° to 60°. Such a terahertz absorber is also polarization-independent due to its symmetrical structure. This omnidirectional and broadband absorber have potential applications in anti-reflection coatings, imaging systems, and so on.

• OSTI ID: 22311116
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
COATINGS
DIFFRACTION
DOPED MATERIALS
INCIDENCE ANGLE
INTERFERENCE
POLARIZATION
REFLECTION
SILICON
SUBSTRATES
THZ RANGE
TWO-DIMENSIONAL CALCULATIONS