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Title: Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO{sub 2} passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.
Authors:
;  [1] ;  [2]
  1. The Pennsylvania State University, University Park, Pennsylvania 16801 (United States)
  2. Applied Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16801 (United States)
Publication Date:
OSTI Identifier:
22311114
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BREAKDOWN; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ENERGY DENSITY; INTERFACES; LASER RADIATION; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; RETENTION; SILICON OXIDES; SILICON SOLAR CELLS; SURFACES