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Title: Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)
Publication Date:
OSTI Identifier:
22311110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; ANTIREFLECTION COATINGS; ARSENIC COMPOUNDS; CURRENTS; DIFFUSION; EQUIPMENT; HEAT EXCHANGERS; INDIUM COMPOUNDS; INTERMEDIATE INFRARED RADIATION; PHOTODETECTORS; QUANTUM EFFICIENCY; RECOMBINATION; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS