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Title: Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states

In this paper, a physics based analytical model is presented for calculation of the two-dimensional electron gas density and the bare surface barrier height of AlGaN/AlN/GaN material stacks. The presented model is based on the concept of distributed surface donor states and the self-consistent solution of Poisson equation at the different material interfaces. The model shows good agreement with the reported experimental data and can be used for the design and characterization of advanced GaN devices for power and radio frequency applications.
Authors:
 [1] ;  [2] ;  [3]
  1. Carinthian Tech Research CTR AG, Europastra├če 4/1, Technologiepark Villach, A-9524 Villach/St. Magdalen (Austria)
  2. (Norway)
  3. Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
Publication Date:
OSTI Identifier:
22311107
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; DENSITY; ELECTRON GAS; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INTERFACES; NITROGEN COMPOUNDS; POISSON EQUATION; RADIOWAVE RADIATION; SURFACES; TWO-DIMENSIONAL CALCULATIONS