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Title: Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3] ;  [1] ;  [2]
  1. School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
  2. (China)
  3. Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States)
Publication Date:
OSTI Identifier:
22311106
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIERS; CONVERSION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GALLIUM OXIDES; GOLD; LASER RADIATION; METALS; MOLECULAR BEAM EPITAXY; OXYGEN; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; THIN FILMS; TITANIUM; TRAPPING; ULTRAVIOLET RADIATION; VACANCIES