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Title: Controlled epitaxial graphene growth within removable amorphous carbon corrals

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [3]
  1. School of Physics, Georgia Institute of Technology, 837 State St. NW, Atlanta, Georgia 30332 (United States)
  2. (Czech Republic)
  3. (France)
Publication Date:
OSTI Identifier:
22311098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; EPITAXY; GRAPHENE; RAMAN SPECTROSCOPY; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 1000-4000 K