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Title: Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 1 ± 0.2 eV and conduction band discontinuity ΔE{sub C} of 1.2 ± 0.2 eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)
Publication Date:
OSTI Identifier:
22311080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; GALLIUM NITRIDES; INTERFACES; LAYERS; NUMERICAL SOLUTION; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES