Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

Journal Article · Mon Jul 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890470· OSTI ID:22311080

Ye, Gang; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong ^[1]; Liu, Zhi Hong ^[2]

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1. Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
2. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 1 ± 0.2 eV and conduction band discontinuity ΔE{sub C} of 1.2 ± 0.2 eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.

• OSTI ID: 22311080
• Journal Information: Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
GALLIUM NITRIDES
INTERFACES
LAYERS
NUMERICAL SOLUTION
SURFACES
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM OXIDES