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Title: Time resolved photoluminescence spectroscopy of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well heterostructures

Photoluminescence (PL) spectra and kinetics of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10–20 μm by placing such QWs in HgCdTe structures with waveguides.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
  2. (Russian Federation)
  3. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22311077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM COMPOUNDS; CARRIERS; CRYSTAL DEFECTS; DECAY; DEPLETION LAYER; INJECTION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SPECTRA; SPECTROSCOPY; TELLURIUM COMPOUNDS; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION; TRAPS; WAVEGUIDES; WAVELENGTHS