Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces
Abstract
The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.
- Authors:
- Publication Date:
- OSTI Identifier:
- 22311070
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; EFFICIENCY; ELECTRIC FIELDS; EQUIPMENT; INJECTION; OXYGEN; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SIMULATION; SPATIAL DISTRIBUTION; SURFACES; TITANIUM OXIDES; VALLEYS
Citation Formats
Gorai, Prashun, and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces. United States: N. p., 2014.
Web. doi:10.1063/1.4890472.
Gorai, Prashun, & Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces. United States. https://doi.org/10.1063/1.4890472
Gorai, Prashun, and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu. 2014.
"Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces". United States. https://doi.org/10.1063/1.4890472.
@article{osti_22311070,
title = {Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces},
author = {Gorai, Prashun and Seebauer, Edmund G., E-mail: eseebaue@illinois.edu},
abstractNote = {The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.},
doi = {10.1063/1.4890472},
url = {https://www.osti.gov/biblio/22311070},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 105,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2014},
month = {Mon Jul 14 00:00:00 EDT 2014}
}
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