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Title: Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.
Authors:
;  [1]
  1. Department of Chemical and Biomolecular Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
22311070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; EFFICIENCY; ELECTRIC FIELDS; EQUIPMENT; INJECTION; OXYGEN; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SIMULATION; SPATIAL DISTRIBUTION; SURFACES; TITANIUM OXIDES; VALLEYS