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Title: Method for characterizing the contact resistance of metal-vanadium dioxide thin film interfaces

The standard method for determining the contact resistance of planar metal-semiconductor interfaces can underestimate the true contact resistance under normal operating conditions, as it relies on the resistivity of the semiconductor material remaining constant during measurement. However, the strong temperature dependence of the resistivity of VO{sub 2} requires a modified approach that maintains a constant power density dissipated within the film to account for Joule heating. We develop a method for measuring contact resistance in semiconductors with a high thermal coefficient of resistivity, demonstrate this method with an example, and compare the results with the standard technique.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2] ;  [4]
  1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  2. Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)
  3. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22311069
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; INTERFACES; JOULE HEATING; METALS; POWER DENSITY; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THIN FILMS; VANADIUM OXIDES