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Title: Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
  3. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22311065
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINIUM COMPOUNDS; CHARGE DENSITY; DENSITY; GALLIUM NITRIDES; IMPURITIES; LAYERS; MANY-BODY PROBLEM; QUANTUM WELLS; WAVE FUNCTIONS