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Title: Picosecond dynamics of a silicon donor based terahertz detector device

We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10{sup −11} W Hz{sup −1/2}. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.
Authors:
; ; ;  [1] ; ; ; ;  [2] ; ;  [3] ; ;  [4]
  1. Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
  2. London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH (United Kingdom)
  3. Laboratoire de Chemie Physique, Université Paris-Sud 11, 91405 Orsay (France)
  4. Institute of Micro/Nanoelectronics, Peking University, Beijing (China)
Publication Date:
OSTI Identifier:
22311063
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DETECTION; EQUIPMENT; FREE ELECTRON LASERS; METALS; NOISE; OXIDES; PULSES; QUANTUM INFORMATION; SEMICONDUCTOR MATERIALS; SILICON; THZ RANGE