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Title: Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor

We fabricated single-walled carbon nanotube (SWNT) field-effect transistor (FET) devices on flattened electrodes, in which there are no height difference between metal electrodes and the substrate. SWNT-FET fabricated using bottom contact technique have some advantages, such that the SWNTs are free from electron irradiation, have direct contact with the desired metal electrodes, and can be functionalized before or after deposition. However, the SWNTs can be bent at the contact point with the metal electrodes leading to a different electrical characteristic of the devices. The number of SWNT direct junctions in short channel length devices is drastically increased by the use of flattened electrodes due to strong attractive interaction between SWNT and the substrate. The flattened electrodes show a better balance between their hole and electron mobility compared to that of the non-flattened electrodes, that is, ambipolar FET characteristic. It is considered that bending of the SWNTs in the non-flattened electrode devices results in a higher Schottky barrier for the electrons.
Authors:
; ; ;  [1]
  1. Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 565-0871 Suita (Japan)
Publication Date:
OSTI Identifier:
22311042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BALANCES; CARBON NANOTUBES; DEPOSITION; ELECTRIC CONTACTS; ELECTRODES; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; HOLES; INTERACTIONS; IRRADIATION; METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES