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Title: Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5] ;  [1]
  1. School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
  2. (UESTC), Chengdu 610054 (China)
  3. Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)
  4. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)
  5. (United States)
Publication Date:
OSTI Identifier:
22311041
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER MOBILITY; CONCENTRATION RATIO; ELECTRIC FIELDS; ELECTRODES; HOMOJUNCTIONS; INDIUM OXIDES; INTERFACES; NANOPARTICLES; POWER TRANSMISSION LINES; SILVER; SOLIDS; THIN FILMS; TRANSISTORS; ZINC OXIDES