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Title: Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States)
  2. Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States)
  3. Kyma Technologies, Raleigh, North Carolina 27617 (United States)
Publication Date:
OSTI Identifier:
22311040
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDES; HYDRIDES; MOLECULAR BEAM EPITAXY; POLARIZATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; TRANSISTORS; VAPOR PHASE EPITAXY