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Title: Scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors

Extrinsic hysteresis effects are often observed in MoS{sub 2} field effect devices due to adsorption of gas molecules on the surface of MoS{sub 2} channel. Scaling is a common method used in ferroics to quantitatively study the hysteresis. Here, the scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors with a back-gated configuration was investigated. The power-law scaling relations were obtained for hysteresis area (〈A〉) and memory window (ΔV) with varying the region of back-gate voltage (V{sub bg,max}). It is interesting to find that the transition voltage in the forward sweep (V{sub FW}) and in the backward sweep (V{sub BW}) shifted to the opposite directions of back-gate voltage (V{sub bg}) with increasing V{sub bg,max}. However, when decreasing V{sub bg,max}, V{sub FW} shifted to positive and reversibly recovered, but V{sub BW} almost kept unchanged. The evolution of 〈A〉, ΔV, V{sub FW,} and V{sub BW} with V{sub bg,max} were discussed by the electrons transferring process between the adsorbate and MoS{sub 2} channel.
Authors:
; ; ;  [1]
  1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)
Publication Date:
OSTI Identifier:
22311036
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; ELECTRIC POTENTIAL; EQUIPMENT; FIELD EFFECT TRANSISTORS; HYSTERESIS; LAYERS; MOLECULES; MOLYBDENUM SULFIDES; SCALING; SURFACES