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Title: High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures

We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ∼2 cm{sup 2}/V s.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ; ;  [6]
  1. Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW (United Kingdom)
  2. Department of Engineering, Engineering Building, Lancaster University, Bailrigg, Lancaster LA1 4YR (United Kingdom)
  3. Institute of Chemical Engineering and High Temperature Processes (ICEHT), Foundation of Research and Technology Hellas (FORTH), Stadiou Strasse Platani, P.O. Box 1414, Patras GR-265 04 (Greece)
  4. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion 71003 (Greece)
  5. (Greece)
  6. Laboratory of Applied Physics, Department of Physics, Aristotle University of Thessaloniki, Thessaloniki GR-54124 (Greece)
Publication Date:
OSTI Identifier:
22311019
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL STRUCTURE; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; EV RANGE; GALLIUM OXIDES; N-TYPE CONDUCTORS; OPTICAL PROPERTIES; OXYGEN; PYROLYSIS; SPRAYS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSISTORS