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Title: The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.
Authors:
 [1] ; ; ;  [2]
  1. School of Electrical and Electronic Engineering, 50 Yonsei-ro, Seodaemun-gu, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIER MOBILITY; DEPOSITS; ELECTRICAL PROPERTIES; INSTABILITY; METALS; OXYGEN; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES