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Title: Selective thermal terahertz emission from GaAs and AlGaAs

The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10{sup 18 }cm{sup −3}) layer is observed. The results are highly relevant to application in optoelectronic THz devices.
Authors:
; ; ; ; ;  [1]
  1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius 01108 (Lithuania)
Publication Date:
OSTI Identifier:
22311012
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALLOYS; ALUMINIUM COMPOUNDS; ELECTRONS; EMISSION; EQUIPMENT; GALLIUM ARSENIDES; INTERFACES; LAYERS; OSCILLATIONS; PHONONS; PLASMA; THZ RANGE