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Title: On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes

Recent experiments presented in by Iveland et al. [Phys. Rev. Lett. 110, 177406 (2013)] demonstrated that hot electron emission from cesiated p-contacts of III-nitride quantum-well (QW) light-emitting diodes (LEDs) coincides with the onset of the efficiency droop. We have carried out Monte Carlo simulations of hot-electron transport in realistic III-N LEDs. The simulations account for the hole population and all relevant electron scattering and recombination processes. We show that Auger recombination generates a significant hot electron population, which is temporarily trapped in the conduction band side-valleys, without decaying completely before reaching the p-contact. The leakage current due to electron overflow and thermal escape from the QWs is shown to have a minimal impact on the droop. We conclude that the experimentally observed hot electrons are created by Auger recombination in QWs, and that the Auger effect as the origin of the droop is the only consistent explanation for the experimental findings of Iveland et al., [Phys. Rev. Lett. 110, 177406 (2013)].
Authors:
; ; ;  [1]
  1. Department of Biomedical Engineering and Computational Sciences, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22311007
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AUGER EFFECT; COMPUTERIZED SIMULATION; CORRELATIONS; EFFICIENCY; ELECTRON EMISSION; ELECTRONS; HOLES; LEAKAGE CURRENT; LIGHT EMITTING DIODES; MONTE CARLO METHOD; NITRIDES; QUANTUM WELLS; RECOMBINATION; SCATTERING; TRAPPING