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Title: The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1] ;  [3] ;  [2]
  1. Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Green School, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINIUM ADDITIONS; CADMIUM SULFIDES; CARRIER DENSITY; COPPER COMPOUNDS; DEFECTS; DIFFUSION LENGTH; DOPED MATERIALS; ELECTRIC CONTACTS; FILL FACTORS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; PASSIVATION; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SODIUM ADDITIONS; SOLAR CELLS; THIN FILMS; ZINC OXIDES