The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

Journal Article · Mon Aug 25 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894214· OSTI ID:22310996

Lee, Kkotnim ^[1]; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun ^[1]; Kim, Donghwan ^[2]

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1. Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)
2. Green School, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

• OSTI ID: 22310996
• Journal Information: Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM ADDITIONS
CADMIUM SULFIDES
CARRIER DENSITY
COPPER COMPOUNDS
DEFECTS
DIFFUSION LENGTH
DOPED MATERIALS
ELECTRIC CONTACTS
FILL FACTORS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
PASSIVATION
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SODIUM ADDITIONS
SOLAR CELLS
THIN FILMS
ZINC OXIDES