skip to main content

Title: High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.
Authors:
;  [1] ;  [2]
  1. Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
Publication Date:
OSTI Identifier:
22310988
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; GAIN; HOLES; INVERTERS; LAYERS; NOISE; OXIDES; SCALING; THICKNESS; TUNGSTEN SELENIDES; WORK FUNCTIONS