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Title: Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

We investigate the impact of incorporating realistic In profiles in simulations of c-plane InGaN/GaN light-emitting diodes. Simulations based on a drift-diffusion model typically overestimate the onset voltage, but have usually been based on the assumption of ideal quantum wells with a square In profile. We demonstrate that more realistic profiles lead to significant modifications of current-density-versus-voltage characteristics, and explain the effects based on changes in the band diagram and carrier overlap.
Authors:
;  [1] ;  [1] ;  [2]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22310985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CURRENT DENSITY; DEPTH; DIFFUSION; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; MODIFICATIONS; QUANTUM WELLS; SIMULATION; SPATIAL DISTRIBUTION