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Title: Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact.
Authors:
; ; ; ; ; ; ;  [1]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22310984
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; GALLIUM NITRIDES; GOLD; INDIUM COMPOUNDS; INDIUM OXIDES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOWIRES; NICKEL; QUANTUM EFFICIENCY; QUANTUM WIRES; SILICON; SUBSTRATES; TIN OXIDES