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Title: Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. School of Physics, Shandong University, Jinan 250100 (China)
  2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
Publication Date:
OSTI Identifier:
22310982
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; ANNEALING; CAPACITANCE; COULOMB FIELD; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; GOLD; NICKEL; POLARIZATION; RAMAN EFFECT; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; TITANIUM; TWO-DIMENSIONAL CALCULATIONS