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Title: Gallium loading of gold seed for high yield of patterned GaAs nanowires

A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.
Authors:
; ;  [1]
  1. Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
Publication Date:
OSTI Identifier:
22310976
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; ANNEALING; CRYSTAL GROWTH; CRYSTALS; DROPLETS; GALLIUM; GALLIUM ARSENIDES; GOLD; IMPURITIES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; RESPIRATORS; SILICON OXIDES; SOLIDS; SUBSTRATES