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Title: Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si{sub 1−x}Ge{sub x} stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310967
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; ELECTRON DIFFRACTION; EPITAXY; EQUIPMENT; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GERMANIUM COMPOUNDS; GERMANIUM SILICIDES; SILICON COMPOUNDS; STRAINS; THICKNESS