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Title: Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071 (China)
  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123 (China)
  3. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710071 (China)
Publication Date:
OSTI Identifier:
22310956
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS; FILMS; GALLIUM NITRIDES; IMPURITIES; LUMINESCENCE; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; STACKING FAULTS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY