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Title: Hydrogenation of GaSb/GaAs quantum rings

We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.
Authors:
; ;  [1] ;  [1] ;  [2] ; ;  [3]
  1. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  2. (Malaysia)
  3. Dipartimento di Fisica, Sapienza Universita di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)
Publication Date:
OSTI Identifier:
22310948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HOLES; HYDROGENATION; PHOTOLUMINESCENCE; QUANTUM DOTS; RED SHIFT; REDUCTION; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS