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Title: Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g{sub m}{sup 2}(0)=0.90 under continuous laser excitation. This relatively high value of g{sub m}{sup 2}(0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Chemistry, and Biology (IFM), Semiconductor Materials, Linköping University, S-58183 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22310944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION; EXCITATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; LASER RADIATION; PHOTONS; QUANTUM DOTS; RESOLUTION