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Title: Single photon emission of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As droplet quantum dot device

In this work, we report the fabrication of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 10{sup 9 }cm{sup −2} range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g{sup (2)}(0) = 0.05).
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D97074 Würzburg (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22310937
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CORRELATIONS; DROPLETS; EPITAXY; GALLIUM ARSENIDES; LINE WIDTHS; PHOTOLUMINESCENCE; PHOTONS; QUANTUM DOTS; SCHOTTKY BARRIER DIODES; SPECTROSCOPY; STRAINS