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Title: Controlling quantum dot energies using submonolayer bandstructure engineering

We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77 K from 1.38 eV to 1.88 eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana, Illinois 61801 (United States)
  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  3. Department of Mechanical Engineering and Materials Science and Energy Science Institute, Yale University, New Haven, Connecticut 06520 (United States)
Publication Date:
OSTI Identifier:
22310931
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; EPITAXY; EV RANGE; GROUND STATES; INDIUM ARSENIDES; LAYERS; QUANTUM DOTS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY