skip to main content

SciTech ConnectSciTech Connect

Title: Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.
Authors:
; ; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
  2. Division of Materials Science, Korea Basic Science Institute (KBSI), 169-148 Daehak-ro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of)
  3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310921
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FERMI LEVEL; GERMANIUM; GRAPHENE; INJECTION; INTERFACES; LAYERS; MODULATION; OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPIN; SUBSTRATES; TRANSISTORS; TUNNEL EFFECT