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Title: Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3]
  1. Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)
  2. IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22310920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; FILAMENTS; HAFNIUM OXIDES; LAYERS; MEMORY DEVICES; POLYCRYSTALS; SILICON; STOICHIOMETRY; SUBSTRATES; SURFACES; SWITCHES; THICKNESS; THIN FILMS; TITANIUM NITRIDES; VACANCIES