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Title: Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Abstract

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Authors:
; ; ;  [1]; ; ;  [2];  [2]
  1. Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)
  2. IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)
Publication Date:
OSTI Identifier:
22310920
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; FILAMENTS; HAFNIUM OXIDES; LAYERS; MEMORY DEVICES; POLYCRYSTALS; SILICON; STOICHIOMETRY; SUBSTRATES; SURFACES; SWITCHES; THICKNESS; THIN FILMS; TITANIUM NITRIDES; VACANCIES

Citation Formats

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de, Kurian, J., Komissinskiy, P., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., and Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories. United States: N. p., 2014. Web. doi:10.1063/1.4893605.
Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de, Kurian, J., Komissinskiy, P., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., & Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories. United States. https://doi.org/10.1063/1.4893605
Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de, Kurian, J., Komissinskiy, P., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., and Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus. 2014. "Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories". United States. https://doi.org/10.1063/1.4893605.
@article{osti_22310920,
title = {Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories},
author = {Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Alff, L. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus},
abstractNote = {The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.},
doi = {10.1063/1.4893605},
url = {https://www.osti.gov/biblio/22310920}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}