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Title: Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
  2. Semiconductor Physics and Devices Lab., Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
Publication Date:
OSTI Identifier:
22310906
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CARRIERS; COUPLING; DECAY; EXCITATION; GALLIUM ARSENIDES; INTERACTIONS; PHOSPHORUS COMPOUNDS; PHOTONS; QUANTUM WELLS; REFLECTIVITY; SURFACES; TUNNEL EFFECT