Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893447· OSTI ID:22310906

Khan, Salahuddin; Chari, Rama; Pal, Suparna ^[1]; Porwal, Sanjay; Sharma, Tarun Kumar; Oak, S. M. ^[2]

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1. Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
2. Semiconductor Physics and Devices Lab., Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.

• OSTI ID: 22310906
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CARRIERS
COUPLING
DECAY
EXCITATION
GALLIUM ARSENIDES
INTERACTIONS
PHOSPHORUS COMPOUNDS
PHOTONS
QUANTUM WELLS
REFLECTIVITY
SURFACES
TUNNEL EFFECT