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Title: Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape

The initial stages of graphene chemical vapor deposition at very low pressures (<10{sup −5 }Torr) were investigated. The growth of large graphene domains (∼up to 100 μm) at very high rates (up to 3 μm{sup 2} s{sup −1}) has been achieved in a cold-wall reactor using a liquid carbon precursor. For high temperature growth (>900 °C), graphene grain shape and symmetry were found to depend on the underlying symmetry of the Cu crystal, whereas for lower temperatures (<900 °C), mostly rounded grains are observed. The temperature dependence of graphene nucleation density was determined, displaying two thermally activated regimes, with activation energy values of 6 ± 1 eV for temperatures ranging from 900 °C to 960 °C and 9 ± 1 eV for temperatures above 960 °C. The comparison of such dependence with the temperature dependence of Cu surface self-diffusion suggests that graphene growth at high temperatures and low pressures is strongly influenced by copper surface rearrangement. We propose a model that incorporates Cu surface self-diffusion as an essential process to explain the orientation correlation between graphene and Cu crystals, and which can clarify the difference generally observed between graphene domain shapes in atmospheric-pressure and low-pressure chemical vapor deposition.
Authors:
; ; ;  [1]
  1. Department of Physics, Federal University of Minas Gerais, Belo Horizonte 31270-901 (Brazil)
Publication Date:
OSTI Identifier:
22310904
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COPPER; CORRELATIONS; CRYSTAL GROWTH; CRYSTALS; DENSITY; EV RANGE; GRAPHENE; SELF-DIFFUSION; SUBSTRATES; SURFACES; SYMMETRY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K