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Title: Graphene/GaN diodes for ultraviolet and visible photodetectors

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ∼mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.
Authors:
; ; ; ; ;  [1] ; ; ;  [1] ;  [2]
  1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22310903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFUSION BARRIERS; ELECTRODES; GALLIUM NITRIDES; GRAPHENE; ILLUMINANCE; INTERFACES; PHOTODETECTORS; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; ULTRAVIOLET RADIATION; VISIBLE RADIATION; WAVELENGTHS