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Title: The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.
Authors:
;  [1] ; ;  [2] ; ; ; ;  [3]
  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)
Publication Date:
OSTI Identifier:
22310900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; DEPOSITION; DISTRIBUTION; DOPED MATERIALS; FERROELECTRIC MATERIALS; HAFNIUM OXIDES; HYSTERESIS; LAYERS; METALS; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON ADDITIONS; THIN FILMS